Break in for new DAC


I just ordered a LTA AERO DAC with Ray Reserve tubes.  I have read that this need 200/300 hours of break-in?   If so, since I have a All tube integrated amp, I really don't want to leave it on that long.  If i have my player run music into new DAC over and over, does the amp really need to be on?

 

Thanks Much

 

mlapenta

I have Denafrips DACS and in my experience, they seem to sound better till around 300 hours, around 20 days of daily use. THEN it became constant. 

Note: I don't turn it off at all

daveteauk, I used predictive design approach of aging impact in my circuits, here is some info to read about it:

https://ntrs.nasa.gov/api/citations/20110014343/downloads/20110014343.pdf

https://en.wikipedia.org/wiki/Transistor_aging

Overview of Aging Effects on MOSFET Devices

  1. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) experience aging, which leads to performance degradation and eventual failure. This aging process is influenced by several factors.

Main Causes of Aging

  1. Electromigration
  2. Definition: Movement of ions due to electron flow.
  3. Impact: Causes material degradation, leading to intermittent glitches and failures.
  4. Charge Trapping
  5. Definition: Trapping of charge carriers in the dielectric material.
  6. Impact: Affects the electrical characteristics of the MOSFET, reducing its efficiency.

Consequences of Aging

  1. Performance Degradation: As MOSFETs age, their ability to switch and conduct diminishes.
  2. Reliability Issues: Increased likelihood of failure in critical applications, such as aerospace and electronics.
  3. Underclocking: Manufacturers often run chips at lower speeds to mitigate aging effects and enhance reliability.

Predictive Approaches

  1. Data-Driven Methodologies: Techniques are being developed to predict the remaining useful life of aging MOSFETs.
  2. Thermal Stress Testing: Controlled experiments help understand how thermal conditions accelerate aging.

Understanding these aging effects is crucial for improving the design and reliability of MOSFET devices in various applications.